标题: Memory Wave: I Expanded My Neural Pathways [打印本页] 作者: BlakeAlcoc 时间: 前天 03:00 标题: Memory Wave: I Expanded My Neural Pathways Memory timings or RAM timings describe the timing data of a memory module or the onboard LPDDRx. Due to the inherent qualities of VLSI and microelectronics, memory chips require time to completely execute commands. Executing commands too rapidly will lead to knowledge corruption and ends in system instability. With applicable time between commands, memory modules/chips may be given the opportunity to completely switch transistors, cost capacitors and accurately signal back info to the memory controller. As a result of system efficiency is determined by how briskly memory can be used, this timing immediately impacts the efficiency of the system. The timing of fashionable synchronous dynamic random-access memory (SDRAM) is usually indicated using four parameters: CL, TRCD, TRP, and TRAS in units of clock cycles; they're commonly written as 4 numbers separated with hyphens, e.g. 7-8-8-24. The fourth (tRAS) is usually omitted, or a fifth, the Command charge, sometimes added (usually 2T or 1T, also written 2N, 1N or CR2).